P2N2907AZL1 vs P2N2907AZL1G

Product Attributes

Part Number P2N2907AZL1 P2N2907AZL1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
P2N2907AZL1 P2N2907AZL1G
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 625 mW 625 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)