NVMYS2D9N04CLTWG vs NVMYS2D1N04CLTWG

Product Attributes

Part Number NVMYS2D9N04CLTWG NVMYS2D1N04CLTWG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVMYS2D9N04CLTWG NVMYS2D1N04CLTWG
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 110A (Tc) 29A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 60µA 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V 3100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.7W (Ta), 68W (Tc) 3.9W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK4 (5x6) LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK