NVMYS025N06CLTWG vs NVMYS021N06CLTWG

Product Attributes

Part Number NVMYS025N06CLTWG NVMYS021N06CLTWG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVMYS025N06CLTWG NVMYS021N06CLTWG
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 21A (Tc) 9.8A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27.5mOhm @ 7.5A, 10V 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 13µA 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 410 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 24W (Tc) 3.8W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK4 (5x6) LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK