NVMFS5830NLT3G vs NVMFS5830NLT1G

Product Attributes

Part Number NVMFS5830NLT3G NVMFS5830NLT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVMFS5830NLT3G NVMFS5830NLT1G
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V -
Current - Continuous Drain (Id) @ 25°C 29A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 2.3mOhm @ 20A, 10V -
Vgs(th) (Max) @ Id 2.4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5880 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 158W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package 5-DFN (5x6) (8-SOFL) -
Package / Case 8-PowerTDFN, 5 Leads -