NVHL020N090SC1 vs NVH4L020N090SC1

Product Attributes

Part Number NVHL020N090SC1 NVH4L020N090SC1
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVHL020N090SC1 NVH4L020N090SC1
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc) 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V 15V, 18V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V 16mOhm @ 60A, 18V
Vgs(th) (Max) @ Id 4.3V @ 20mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V 196 nC @ 15 V
Vgs (Max) +19V, -10V +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V 4415 pF @ 450 V
FET Feature - -
Power Dissipation (Max) 503W (Tc) 484W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-4L
Package / Case TO-247-3 TO-247-4