NVH4L045N065SC1 vs NVH4L015N065SC1

Product Attributes

Part Number NVH4L045N065SC1 NVH4L015N065SC1
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVH4L045N065SC1 NVH4L015N065SC1
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V 15V, 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V 18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id 4.3V @ 8mA 4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V 283 nC @ 18 V
Vgs (Max) +22V, -8V +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V 4790 pF @ 325 V
FET Feature - -
Power Dissipation (Max) 187W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-4L
Package / Case TO-247-4 TO-247-4