NVF2955T1G vs NVF2955PT1G

Product Attributes

Part Number NVF2955T1G NVF2955PT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVF2955T1G NVF2955PT1G
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 750mA, 10V 185mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 14.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 25 V 492 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA