NVD4809NHT4G vs NVD4809NT4G

Product Attributes

Part Number NVD4809NHT4G NVD4809NT4G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVD4809NHT4G NVD4809NT4G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 11.5 V 25 nC @ 11.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2155 pF @ 12 V 1456 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta), 52W (Tc) 1.4W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK-3 DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63