NVB5860NLT4G vs NVB5860NT4G

Product Attributes

Part Number NVB5860NLT4G NVB5860NT4G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NVB5860NLT4G NVB5860NT4G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 220A (Ta) 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V 3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13216 pF @ 25 V 10760 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 283W (Tc) 283W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB