NTY100N10 vs NTY100N10G

Product Attributes

Part Number NTY100N10 NTY100N10G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTY100N10 NTY100N10G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 123A (Tc) 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 50A, 10V 10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 350 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10110 pF @ 25 V 10110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 313W (Tc) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 TO-264
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA