NTS4101PT1G vs NTS4101PT1H

Product Attributes

Part Number NTS4101PT1G NTS4101PT1H
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTS4101PT1G NTS4101PT1H
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.37A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V -
FET Feature - -
Power Dissipation (Max) 329mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SC-70-3 (SOT323) -
Package / Case SC-70, SOT-323 -