NTR4101PT1G vs NTR4171PT1G

Product Attributes

Part Number NTR4101PT1G NTR4171PT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTR4101PT1G NTR4171PT1G
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 1.6A, 4.5V 75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V 15.6 nC @ 10 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 10 V 720 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 420mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3