NTR1P02LT1G vs NTR1P02LT1H

Product Attributes

Part Number NTR1P02LT1G NTR1P02LT1H
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTR1P02LT1G NTR1P02LT1H
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V -
Vgs(th) (Max) @ Id 1.25V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 5 V -
FET Feature - -
Power Dissipation (Max) 400mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-23-3 (TO-236) -
Package / Case TO-236-3, SC-59, SOT-23-3 -