NTP8G202NG vs NTP8G206NG

Product Attributes

Part Number NTP8G202NG NTP8G206NG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTP8G202NG NTP8G206NG
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology GaNFET (Cascode Gallium Nitride FET) GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V 8V
Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V 180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V 9.3 nC @ 4.5 V
Vgs (Max) ±18V ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V 760 pF @ 480 V
FET Feature - -
Power Dissipation (Max) 65W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3