NTP5864NG vs NTP5862NG

Product Attributes

Part Number NTP5864NG NTP5862NG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTP5864NG NTP5862NG
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 12.4mOhm @ 20A, 10V 5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 6000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 107W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3