NTMTSC1D6N10MCTXG vs NTMTS1D6N10MCTXG

Product Attributes

Part Number NTMTSC1D6N10MCTXG NTMTS1D6N10MCTXG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMTSC1D6N10MCTXG NTMTS1D6N10MCTXG
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 267A (Tc) 36A (Ta), 273A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 90A, 10V 1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 650µA 4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7630 pF @ 50 V 7630 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 5.1W (Ta), 291W (Tc) 5W (Ta), 291W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount
Supplier Device Package 8-TDFNW (8.3x8.4) 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN 8-PowerTDFN