NTMSD3P102R2 vs NTMSD2P102R2

Product Attributes

Part Number NTMSD3P102R2 NTMSD2P102R2
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMSD3P102R2 NTMSD2P102R2
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.34A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V 90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 4.5 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V 750 pF @ 16 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 730mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)