NTMSD2P102LR2 vs NTMSD2P102LR2G

Product Attributes

Part Number NTMSD2P102LR2 NTMSD2P102LR2G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMSD2P102LR2 NTMSD2P102LR2G
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.4A, 4.5V 90mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 18 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 16 V 750 pF @ 16 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)