NTMS5P02R2G vs NTMS5P02R2

Product Attributes

Part Number NTMS5P02R2G NTMS5P02R2
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMS5P02R2G NTMS5P02R2
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) 7.05A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V 33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 35 nC @ 4.5 V
Vgs (Max) ±10V -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 16 V 1900 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 790mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)