NTMS4N01R2 vs NTMS4P01R2

Product Attributes

Part Number NTMS4N01R2 NTMS4P01R2
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMS4N01R2 NTMS4P01R2
Product Status Obsolete Obsolete
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 12 V
Current - Continuous Drain (Id) @ 25°C - 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 4.2A, 4.5V 45mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id - 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 35 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds - 1850 pF @ 9.6 V
FET Feature - -
Power Dissipation (Max) 770mW (Ta) 790mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)