NTMFS6H801NT1G vs NTMFS6H801NLT1G

Product Attributes

Part Number NTMFS6H801NT1G NTMFS6H801NLT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMFS6H801NT1G NTMFS6H801NLT1G
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 157A (Tc) 24A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 40 V 5126 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 166W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads