NTMFS4H013NFT3G vs NTMFS4H013NFT1G

Product Attributes

Part Number NTMFS4H013NFT3G NTMFS4H013NFT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMFS4H013NFT3G NTMFS4H013NFT1G
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 43A (Ta), 269A (Tc) 43A (Ta), 269A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3923 pF @ 12 V 3923 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.7W (Ta), 104W (Tc) 2.7W (Ta), 104W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads