NTMFS4C029NT1G vs NTMFS4C09NT1G

Product Attributes

Part Number NTMFS4C029NT1G NTMFS4C09NT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTMFS4C029NT1G NTMFS4C09NT1G
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 46A (Tc) 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.88mOhm @ 30A, 10V 5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V 10.9 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V 1252 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.49W (Ta), 23.6W (Tc) 760mW (Ta), 25.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads