NTLJS1102PTAG vs NTLJS1102PTBG

Product Attributes

Part Number NTLJS1102PTAG NTLJS1102PTBG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTLJS1102PTAG NTLJS1102PTBG
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 6.2A, 4.5V 36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 720mV @ 250µA 720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V 25 nC @ 4.5 V
Vgs (Max) ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 1585 pF @ 4 V 1585 pF @ 4 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad