NTLJD3182FZTAG vs NTLJD3182FZTBG

Product Attributes

Part Number NTLJD3182FZTAG NTLJD3182FZTBG
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTLJD3182FZTAG NTLJD3182FZTBG
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V 7.8 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V 450 pF @ 10 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad