NTK3139PT1G vs NTK3139PT1H

Product Attributes

Part Number NTK3139PT1G NTK3139PT1H
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTK3139PT1G NTK3139PT1H
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 480mOhm @ 780mA, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±6V -
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 16 V -
FET Feature - -
Power Dissipation (Max) 310mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-723 -
Package / Case SOT-723 -