NTJD1155LT1G vs NTJD1155LT2G

Product Attributes

Part Number NTJD1155LT1G NTJD1155LT2G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
NTJD1155LT1G NTJD1155LT2G
Product Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 8V 8V
Current - Continuous Drain (Id) @ 25°C 1.3A -
Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 400mW 400mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363