NTHS5441T1 vs NTHS5443T1

Product Attributes

Part Number NTHS5441T1 NTHS5443T1
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHS5441T1 NTHS5443T1
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V 65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) - ±12V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 5 V -
FET Feature - -
Power Dissipation (Max) - 1.3W (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead