NTHS4111PT1 vs NTHS4111PT1G

Product Attributes

Part Number NTHS4111PT1 NTHS4111PT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHS4111PT1 NTHS4111PT1G
Product Status Active Obsolete
FET Type - P-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 45mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 28 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1500 pF @ 24 V
FET Feature - -
Power Dissipation (Max) - 700mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - ChipFET™
Package / Case - 8-SMD, Flat Lead