NTHS4101PT1G vs NTHS2101PT1G

Product Attributes

Part Number NTHS4101PT1G NTHS2101PT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHS4101PT1G NTHS2101PT1G
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 8 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tj) 5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 4.8A, 4.5V 25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 30 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 16 V 2400 pF @ 6.4 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead