NTHS2101PT1 vs NTHS2101PT1G

Product Attributes

Part Number NTHS2101PT1 NTHS2101PT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHS2101PT1 NTHS2101PT1G
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tj) 5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 5.4A, 4.5V 25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 30 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 6.4 V 2400 pF @ 6.4 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead