NTHL020N090SC1 vs NTHL060N090SC1

Product Attributes

Part Number NTHL020N090SC1 NTHL060N090SC1
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHL020N090SC1 NTHL060N090SC1
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V 15V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V 84mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4.3V @ 20mA 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V 87 nC @ 15 V
Vgs (Max) +19V, -10V +19V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V 1770 pF @ 450 V
FET Feature - -
Power Dissipation (Max) 503W (Tc) 221W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3