NTHL040N120SC1 vs NTH4L040N120SC1

Product Attributes

Part Number NTHL040N120SC1 NTH4L040N120SC1
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHL040N120SC1 NTH4L040N120SC1
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 106 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V 1762 pF @ 800 V
FET Feature - -
Power Dissipation (Max) 348W (Tc) 319W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-4L
Package / Case TO-247-3 TO-247-4