NTHD4P02FT1G vs NTHD4N02FT1G

Product Attributes

Part Number NTHD4P02FT1G NTHD4N02FT1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTHD4P02FT1G NTHD4N02FT1G
Product Status Active Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tj) 2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 155mOhm @ 2.2A, 4.5V 80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 4 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 10 V 300 pF @ 10 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Tj) 910mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead