NTD5C648NLT4G vs NTD5C688NLT4G

Product Attributes

Part Number NTD5C648NLT4G NTD5C688NLT4G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTD5C648NLT4G NTD5C688NLT4G
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 91A (Tc) 7.5A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.1mOhm @ 45A, 10V 27.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 30 V -
FET Feature - -
Power Dissipation (Max) 4.4W (Ta), 76W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63