NTD4909NT4H vs NTD4909NT4G

Product Attributes

Part Number NTD4909NT4H NTD4909NT4G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTD4909NT4H NTD4909NT4G
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id - 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 17.5 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1314 pF @ 15 V
FET Feature - -
Power Dissipation (Max) - 1.37W (Ta), 29.4W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - DPAK
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63