NTD4809NA-1G vs NTD4809NH-1G

Product Attributes

Part Number NTD4809NA-1G NTD4809NH-1G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTD4809NA-1G NTD4809NH-1G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V 2155 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta), 52W (Tc) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA