NTB125N02RT4 vs NTB125N02RT4G

Product Attributes

Part Number NTB125N02RT4 NTB125N02RT4G
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
NTB125N02RT4 NTB125N02RT4G
Product Status Obsolete Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 24 V
Current - Continuous Drain (Id) @ 25°C - 95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 28 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 3440 pF @ 20 V
FET Feature - -
Power Dissipation (Max) - 1.98W (Ta), 113.6W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - D2PAK
Package / Case - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB