NSVMUN5331DW1T1G vs NSVMUN5334DW1T1G

Product Attributes

Part Number NSVMUN5331DW1T1G NSVMUN5334DW1T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSVMUN5331DW1T1G NSVMUN5334DW1T1G
Product Status Active Active
Transistor Type - 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) - 100mA
Voltage - Collector Emitter Breakdown (Max) - 50V
Resistor - Base (R1) - 22kOhms
Resistor - Emitter Base (R2) - 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce - 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic - 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) - 500nA
Frequency - Transition - -
Power - Max - 250mW
Mounting Type - Surface Mount
Package / Case - 6-TSSOP, SC-88, SOT-363
Supplier Device Package - SC-88/SC70-6/SOT-363