NSVMUN5333DW1T1G vs NSVMUN5331DW1T1G

Product Attributes

Part Number NSVMUN5333DW1T1G NSVMUN5331DW1T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSVMUN5333DW1T1G NSVMUN5331DW1T1G
Product Status Active Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) -
Current - Collector (Ic) (Max) 100mA -
Voltage - Collector Emitter Breakdown (Max) 50V -
Resistor - Base (R1) 4.7kOhms -
Resistor - Emitter Base (R2) 47kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition - -
Power - Max 250mW -
Mounting Type Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 -