NSVF6001SB6T1G vs NSVF6003SB6T1G

Product Attributes

Part Number NSVF6001SB6T1G NSVF6003SB6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
NSVF6001SB6T1G NSVF6003SB6T1G
Product Status Active Active
Transistor Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 12V
Frequency - Transition - 7GHz
Noise Figure (dB Typ @ f) - 3dB @ 1GHz
Gain - 9dB
Power - Max - 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 50mA, 5V
Current - Collector (Ic) (Max) - 150mA
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - SOT-23-6 Thin, TSOT-23-6
Supplier Device Package - 6-CPH