NSV60201SMTWTBG vs NSV60200SMTWTBG

Product Attributes

Part Number NSV60201SMTWTBG NSV60200SMTWTBG
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSV60201SMTWTBG NSV60200SMTWTBG
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A 450mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA, 2V 150 @ 100mA, 2V
Power - Max 1.8 W 1.8 W
Frequency - Transition 180MHz 155MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)