NSV40200UW6T1G vs NSS40200UW6T1G

Product Attributes

Part Number NSV40200UW6T1G NSS40200UW6T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSV40200UW6T1G NSS40200UW6T1G
Product Status Active Last Time Buy
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A 300mV @ 20mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V 150 @ 1A, 2V
Power - Max 875 mW 875 mW
Frequency - Transition 140MHz 140MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)