NSV1C201MZ4T1G vs NSV1C200MZ4T1G

Product Attributes

Part Number NSV1C201MZ4T1G NSV1C200MZ4T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSV1C201MZ4T1G NSV1C200MZ4T1G
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A 220mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V 120 @ 500mA, 2V
Power - Max 800 mW 800 mW
Frequency - Transition 100MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)