NSTB60BDW1T1G vs NSVTB60BDW1T1G

Product Attributes

Part Number NSTB60BDW1T1G NSVTB60BDW1T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSTB60BDW1T1G NSVTB60BDW1T1G
Product Status Active Active
Transistor Type 1 NPN Pre-Biased, 1 PNP 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 150mA 150mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 22kOhms 22kOhms
Resistor - Emitter Base (R2) 47kOhms 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 120 @ 5mA, 10V 80 @ 5mA, 10V / 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition 140MHz -
Power - Max 250mW 250mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363