NSTB1002DXV5T1G vs NSTB1003DXV5T1G

Product Attributes

Part Number NSTB1002DXV5T1G NSTB1003DXV5T1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
NSTB1002DXV5T1G NSTB1003DXV5T1G
Product Status Active Obsolete
Transistor Type 1 NPN Pre-Biased, 1 PNP 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA, 200mA -
Voltage - Collector Emitter Breakdown (Max) 50V, 40V -
Resistor - Base (R1) 47kOhms -
Resistor - Emitter Base (R2) 47kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 100 @ 1mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 500nA -
Frequency - Transition 250MHz -
Power - Max 500mW -
Mounting Type Surface Mount Surface Mount
Package / Case SOT-553 SOT-553
Supplier Device Package SOT-553 SOT-553