NST847BPDP6T5G vs NST847BDP6T5G

Product Attributes

Part Number NST847BPDP6T5G NST847BDP6T5G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
NST847BPDP6T5G NST847BDP6T5G
Product Status Active Active
Transistor Type NPN, PNP 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA, 700mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V / 220 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 350mW 350mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-963 SOT-963
Supplier Device Package SOT-963 SOT-963