NST3946DP6T5G vs NST3906DP6T5G

Product Attributes

Part Number NST3946DP6T5G NST3906DP6T5G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
NST3946DP6T5G NST3906DP6T5G
Product Status Active Active
Transistor Type NPN, PNP 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 350mW 350mW
Frequency - Transition 200MHz, 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-963 SOT-963
Supplier Device Package SOT-963 SOT-963