NSS20200LT1G vs NSS60200LT1G

Product Attributes

Part Number NSS20200LT1G NSS60200LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
NSS20200LT1G NSS60200LT1G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 20 V 60 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A 220mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V 150 @ 500mA, 2V
Power - Max 460 mW 460 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)