NSS60100DMTTBG vs NSS60101DMTTBG

Product Attributes

Part Number NSS60100DMTTBG NSS60101DMTTBG
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
NSS60100DMTTBG NSS60101DMTTBG
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 NPN (Dual)
Current - Collector (Ic) (Max) 1A 1A
Voltage - Collector Emitter Breakdown (Max) 60V 60V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 1A 180mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V 120 @ 500mA, 2V
Power - Max 2.27W 2.27W
Frequency - Transition 155MHz 180MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)